2N5550 Datasheet, PDF (1/6 Pages) ON Semiconductor – mplifier Transistors(NPN Silicon)

2N5550, 2N5551
Preferred Device
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
• Device Marking: Device Type, e.g., 2N5550, Date Code
MAXIMUM RATINGS
Rating
Symbol 2N5550 2N5551 Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation
@ T_A = 25°C
Derate above 25°C
V_CEO
V_CBO
V_EBO
I_C
P_D
140
160
160
180
6.0
600
Vdc
Vdc
Vdc
mAdc
625
mW
5.0
mW/°C
Total Device Dissipation
@ T_C = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
P_D
T_J, T_stg
1.5
12
−55 to +150
W
mW/°C
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
R_qJA
200
°C/W
Thermal Resistance,
Junction−to−Case
R_qJC
83.3
°C/W
COLLECTOR
3
2
BASE
1
EMITTER
MARKING
DIAGRAM
123
TO−92
CASE 29
STYLE 1
2N
55xx
YWW
55xx
Y
WW
Specific Device Code
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. 3
2N5550/D