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2N5550 Datasheet, PDF (2/6 Pages) ON Semiconductor – mplifier Transistors(NPN Silicon)
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2N5550, 2N5551
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0)
2N5550
2N5551
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0 )
2N5550
2N5551
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
(VCB = 120 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0, TA = 100°C)
(VCB = 120 Vdc, IE = 0, TA = 100°C)
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
ON CHARACTERISTICS (Note 1)
2N5550
2N5551
2N5550
2N5551
DC Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
2N5550
2N5551
(IC = 10 mAdc, VCE = 5.0 Vdc)
2N5550
2N5551
(IC = 50 mAdc, VCE = 5.0 Vdc)
Collector−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
Base−Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALL−SIGNAL CHARACTERISTICS
Current−Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW,
f = 1.0 kHz)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2N5550
2N5551
Both Types
2N5550
2N5551
Both Types
2N5550
2N5551
2N5550
2N5551
2N5550
2N5551
Symbol
Min
Max
Unit
V(BR)CEO
140
160
V(BR)CBO
160
180
V(BR)EBO
6.0
ICBO
−
−
−
−
IEBO
−
Vdc
−
−
Vdc
−
−
−
Vdc
100
nAdc
50
100
mAdc
50
50
nAdc
hFE
60
80
60
80
20
30
VCE(sat)
−
−
−
VBE(sat)
−
−
−
fT
100
Cobo
−
Cibo
−
−
hfe
50
NF
−
−
−
−
−
250
250
−
−
Vdc
0.15
0.25
0.20
Vdc
1.0
1.2
1.0
300
MHz
6.0
pF
pF
30
20
200
−
dB
10
8.0
2
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