DS1248 Datasheet, PDF (9/21 Pages) Dallas Semiconductor – 1024k NV SRAM with Phantom Clock

DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN
Input Leakage Current
I/O Leakage Current
I_IL
-1.0
I_IO
-1.0
CE ³ V_IH ≤ V_CC
Output Current @ 2.4V
I_OH
-1.0
Output Current @ 0.4V
I_OL
2.0
Standby Current CE = 2.2V
I_CCS1
Standby Current
I_CCS2
CE = V_CC - 0.5V
Operating Current t_CYC = 70ns
I_CC01
Write Protection Voltage
V_PF
2.80
Battery Switchover Voltage
V_SO
DS1248/DS1248P
Over the operating range (3.3V)
TYP
MAX UNITS NOTES
+1.0
mA
12
+1.0
mA
mA
mA
5
7
mA
2.0
3.0
mA
50
mA
2.86
2.97
V
11
V_BAT or V_PF
V
11
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C_IN
C_I/O
MIN
TYP
5
5
MAX
10
10
(T_A = +25°C)
UNITS NOTES
pF
pF
MEMORY AC ELECTRICAL CHARACTERISTICS Over the operating range (5V)
PARAMETER
SYMBOL
DS1248Y-70
MIN
MAX
UNITS NOTES
Read Cycle Time
Access Time
OE to Output Valid
t_RC
70
ns
t_ACC
70
ns
t_OE
35
ns
CE to Output Valid
t_CO
70
ns
OE or CE to Output Active
t_COE
5
ns
5
Output High-Z from Deselection
t_OD
25
ns
5
Output Hold from Address Change
t_OH
5
ns
Write Cycle Time
t_WC
70
ns
Write Pulse Width
t_WP
50
ns
3
Address Setup Time
t_AW
0
ns
Write Recovery Time
t_WR
0
ns
Output High-Z from WE
t_ODW
25
ns
5
Output Active from WE
t_OEW
5
ns
5
Data Setup Time
Data Hold Time from WE
t_DS
30
t_DH
5
ns
4
ns
4
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