 English |
|
|
|
|
|
|
|
| DS1225AB Datasheet, PDF (7/10 Pages) Dallas Semiconductor – 64k Nonvolatile SRAM | |||
| |||
| ◁ |
POWER-DOWN/POWER-UP CONDITION
DS1225AB/AD
SEE NOTE 11
POWER-DOWN/POWER-UP TIMING
PARAMETER
SYMBOL
CE at VIH before Power-Down
tPD
VCC slew from VTP to 0V
tF
VCC slew from 0V to VTP
tR
CE at VIH after Power-Up
tREC
PARAMETER
Expected Data Retention Time
SYMBOL
tDR
MIN
0
300
300
2
MIN
10
TYP
TYP
(TA : See Note 10)
MAX UNITS NOTES
µs
11
µs
µs
125 ms
(TA = 25°C)
MAX UNITS NOTES
years
9
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
7 of 10
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese