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DS1225AB Datasheet, PDF (3/10 Pages) Dallas Semiconductor – 64k Nonvolatile SRAM
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
DS1225AB/AD
-0.3V to +7.0V
0°C to 70°C; -40°C to +85°C for IND parts
-40°C to +70°C; -40°C to +85°C for IND parts
260°C for 10 seconds
∗ This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL MIN TYP
DS1225AB Power Supply Voltage
DS1225AD Power Supply Voltage
Logic 1
Logic 0
VCC
4.75 5.0
VCC
4.50 5.0
VIH
2.2
VIL
0.0
(TA: See Note 10)
MAX UNITS NOTES
5.25
V
5.5
V
VCC
V
+0.8
V
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Input Leakage Current
IIL
I/O Leakage Current
CE > VIH< VCC
IIO
Output Current @ 2.4V
IOH
Output Current @ 0.4V
IOL
Standby Current CE =2.2V
ICCS1
Standby Current CE =VCC -0.5V
Operating Current tCYC=200 ns
(Commercial)
ICCS2
ICC01
Operating Current tCYC=200 ns
(Industrial)
ICC01
Write Protection Voltage
(DS1225AB)
VTP
Write Protection Voltage
(DS1225AD)
VTP
MIN
-1.0
-1.0
-1.0
2.0
4.50
4.25
(VCC =5V ± 5% for DS1225AB)
(TA: See Note 10)
(VCC =5V ± 10% for DS1225AD)
TYP MAX UNITS NOTES
+1.0
µA
+1.0
µA
mA
mA
5.0
10.0
mA
3.0
5.0
mA
75
mA
85
mA
4.62 4.75
V
4.37
4.5
V
CAPACITANCE
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
CIN
CI/O
MIN
TYP
5
5
MAX
10
10
(TA =25°C)
UNITS NOTES
pF
pF
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