DS1225AB Datasheet, PDF (4/10 Pages) Dallas Semiconductor – 64k Nonvolatile SRAM

DS1225AB/AD
AC ELECTRICAL CHARACTERISTICS
(V_CC =5V ± 5% for DS1225AB)
(T_A: See Note 10)
(V_CC =5V ± 10% for DS1225AD)
DS1225AB-70 DS1220AB-85
PARAMETER
SYMBOL DS1225AD-70 DS1220AD-85 UNITS NOTES
MIN MAX MIN MAX
Read Cycle Time
Access Time
OE to Output Valid
t_RC
70
85
ns
t_ACC
70
85
ns
t_OE
35
45
ns
CE to Output Valid
t_CO
70
85
ns
OE or CE to Output Active
t_COE
5
5
ns
5
Output High Z from Deselection
t_OD
25
30
ns
5
Output Hold from Address
Change
t_OH
5
5
ns
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Z from WE
t_WC
70
85
ns
t_WP
55
65
ns
3
t_AW
0
0
ns
t_WR1
0
0
ns
12
t_WR2
10
10
ns
13
t_ODW
25
30
ns
5
Output Active from WE
t_OEW
5
5
ns
5
Data Setup Time
Data Hold Time
t_DS
30
35
t_DH1
0
0
t_DH2
10
10
ns
4
ns
12
ns
13
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