DS1200 Datasheet, PDF (6/7 Pages) Dallas Semiconductor – Serial RAM Chip

ABSOLUTE MAXIMUM RATING*
Voltage Range on Any Pin Relative to Ground
Operating Temperature Range
Storage Temperature Range
-1.0V to +7.0V
0°C to +70°C
-40°C to +70°C
DS1200
* This is a stress rating only and functional operation of the device at these or any other conditions
beyond those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time can affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL MIN
TYP
Logic 1
V_IH
2.0
Logic 0
V_IL
-0.3
RST Logic 1
V_IHE
3.8
Power Supply Voltage
V_CC
4.5
5.0
Battery Voltage
V_BAT
2.0
MAX
0.8
5.5
4.0
(0°C to +70°C)
UNITS NOTES
V
1, 2, 10
V
1
1, 7, 11
V
1
V
1
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN
Input Leakage
I_L
Output Leakage
I_LO
Output Current at 2.4V
I_OH
-1
Output Current at 0.4V
I_OL
RST Input Resistance
Z_RST
10
DQ Input Resistance
Z_DQ
10
CLK Input Resistance
Z_CLK
10
Active Current
I_CC1
Standby Current
I_CC2
RST Current
I_RST
2
(0°C to +70°C; V_CC = 5V ± 10%)
TYP MAX UNITS NOTES
+500
µA
5
+500
µA
5
mA
+2
mA
40
kΩ
1
40
kΩ
1
40
kΩ
1
6
mA
8
2.5
mA
8
mA 7, 8, 13
CAPACITANCE
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL
C_IN
C_OUT
MIN
TYP
MAX
5
7
(T_A = +25°C)
UNITS NOTES
pF
pF
6 of 7