DS1217M_03 Datasheet, PDF (5/8 Pages) Dallas Semiconductor – Nonvolatile Read/Write Cartridge

POWER-DOWN/POWER-UP CONDITION
DS1217M Nonvolatile Read/Write Cartridge
POWER-DOWN/POWER-UP TIMING
(T_A = 0°C to +70°C)
PARAMETER
SYMBOL
CONDITIONS
CE at V_IH Before Power-Down
t_PD
(Note 9)
V_CC Slew from 4.5V to 0
(CE at V_IH)
t_F
V_CC Slew from 0 to 4.5V
(CE at V_IH)
t_R
CE at V_IH After Power-Up
t_REC
(Note 9)
(T_A = +25°C)
PARAMETER
Expected Data Retention
Time
SYMBOL
CONDITIONS
t_DR
(Note 10)
MIN
TYP
MAX UNITS
0
s
100
s
0
s
2
125
ms
MIN
TYP
MAX UNITS
5
years
WARNING: Under no circumstances are negative undershoots of any amplitude allowed when the device is in
battery-backup mode.
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
Note 10:
WE is high for a read cycle.
OE = V_IH or V_IL. If OE = V_IH during a write cycle, the output buffers remain in a high-impedance state.
If the CE low transition occurs simultaneously with or later than the WE high transition in Write Cycle 1, that output buffers remain in
a high-impedance state in this period.
If the CE high transition occurs prior to or simultaneously with the WE high transition in Write Cycle 1, the output buffers remain in a
high-impedance state in this period.
If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a high-
impedance state in this period.
Removing and installing the cartridge with power applied may disturb data.
Each DS1217M I smarked with a 4-digit code AABB. AA designates the year of manufacture. BB designates the week of
manufacture. The expected t_DR is defined as starting at the date of manufacture. This parameter is assured by component selection,
process control, and design. It is not measured directly during production testing.
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