DS1217M_03 Datasheet, PDF (3/8 Pages) Dallas Semiconductor – Nonvolatile Read/Write Cartridge

AC ELECTRICAL CHARACTERISTICS
(V_CC = 5V ±10%, T_A = 0°C to +70°C.)
PARAMETER
SYMBOL
CONDITIONS
Read Cycle Time
t_RC
Access Time
t_ACC
OE to Output Valid
t_OE
CE to Output Valid
t_CO
OE or CE to Output Active
Output High-Z from
Deselection
Output Hold from Address
Change
Read Recovery Time
t_COE
(Note 1)
t_OD
(Note 1)
t_OH
t_RR
Write Cycle Time
t_WC
Write Pulse Width
t_WP
(Note 2)
Address Setup Time
t_AW
Write Recovery Time
t_WR
Output High-Z from WE
t_ODW
(Note 1)
Output Active from WE
t_OEW
(Note 1)
Data Setup Time
t_DS
(Note 3)
Data Hold Time from WE
t_DH
(Note 3)
DS1217M Nonvolatile Read/Write Cartridge
MIN
TYP
MAX UNITS
250
ns
250
ns
125
ns
210
ns
5
ns
125
ns
5
ns
40
ns
250
ns
170
ns
0
ns
20
ns
100
ns
5
ns
100
ns
20
ns
Note 1:
Note 2:
Note 3:
These parameters are sampled with a 5pF load and are not 100% tested.
t_WP is specified as the logical AND of CE and WE t_WP is measured from the latter of CE or WE going low to the earlier of CE or WE
going high.
t_DH, t_DS are measured form the earlier of CE or WE going high.
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