DS1330W Datasheet, PDF (4/11 Pages) Dallas Semiconductor – 3.3V 256K Nonvolatile SRAM with Battery Monitor

DS1330W
AC ELECTRICAL CHARACTERISTICS
PARAMETER
Read Cycle Time
Access Time
OE to Output Valid
CE to Output Valid
OE or CE to Output Active
Output High Z from Deselection
Output Hold from Address
Change
Write Cycle Time
Write Pulse Width
Address Setup Time
Write Recovery Time
Output High Z from WE
Output Active from WE
Data Setup Time
Data Hold Time
READ CYCLE
SYMBOL
t_RC
t_ACC
t_OE
t_CO
t_COE
t_OD
t_OH
t_WC
t_WP
t_AW
t_WR1
t_WR2
t_ODW
t_OEW
t_DS
t_DH1
t_DH2
(t_A: See Note 10) (V_CC=3.3V ±0.3V)
DS1330W–150
MIN
MAX
TYPE
UNITS NOTES
150
ns
150
ns
70
ns
150
ns
5
ns
5
35
ns
5
5
ns
150
100
0
5
20
35
5
60
0
20
ns
ns
3
ns
ns
12
13
ns
5
ns
5
ns
4
ns
12
13
ADDRESSES
CE
OE
D_OUT
SEE NOTE 1
t_RC
V_IH
V_IH
V_IH
V_IL
V_IL
V_IL
V_IH
t_ACC
V_IL
t_CO
V_IH
t_OE
V_IL
t_COE
t_COE
t_OH
V_IH
t_OD
V_IH
t_OD
V_OH OUTPUT V_OH
V_OL DATA VALID V_OL
022598 4/11