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DS1135 Datasheet, PDF (4/6 Pages) Dallas Semiconductor – 3-in-1 High-Speed Silicon Delay Line
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
Operating Temperature
Storage Temperature
Soldering Temperature
Short Circuit Output Current
-1.0V to +7.0V
-40°C to +85°C
-55°C to +125°C
See J-STD-020A specification
50 mA for 1 second
DS1135
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Supply Voltage
Active Current
SYMBOL
VCC
ICC
TEST
CONDITION
VCC =5.25V
Period=1µs
High Level Input Voltage
VIH
Low Level Input Voltage
VIL
Input Leakage
IL
0V≤VI ≤VCC
High Level Output
Current
ICC
VCC =4.75V
VOH =4V
Low Level Output Current
ICC
VCC =4.75V
VOL=0.5V
(-40°C to +85°C;VCC=+5V±5%)
MIN TYP MAX UNITS NOTES
4.75 5.00 5.25
V
1
35
mA
2.2
VCC
V
+0.5
1
-0.5
0.8
V
1
-1.0
+1.0
µA
mA
-1.0
1
12
mA
1
AC ELECTRICAL CHARACTERISTICS
(-40°C to +85°C;VCC=+5V±5%)
PARAMETER
SYMBOL MIN
TYP
MAX UNITS NOTES
Period
tPERIOD
2 (tWI )
ns
2
Input Pulse Width
tWI
100% of
Tap Delay
ns
2
Input-to-Output Delay
tPLH, tPHL
See Table 1
ns
Output Rise or Fall Time
tOF, tOR
2.0
2.5
ns
Power-up Time
tPU
100
ms
3
CAPACITANCE
PARAMETER
Input Capacitance
SYMBOL
CIN
MIN
TYP
MAX
10
(TA=25°C)
UNITS NOTES
pF
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