DS1689_05 Datasheet, PDF (29/36 Pages) Dallas Semiconductor – 3V/5V Serialized Real-Time Clocks with NV RAM Control

POWER-UP/POWER-DOWN TIMING—5V
(T_A = +25°C)
PARAMETER
SYMBOL
MIN
CS High to Power-Fail
t_PF
Recovery at Power-Up
t_REC
V_CC Slew Rate Power-Down
t_F
4.0 ≤ V_CC ≤ 4.5V
300
V_CC Slew Rate Power-Down
t_FB
3.0 ≤ V_CC ≤ 4.0V
10
V_CC Slew Rate Power-Up
t_R
4.5V ≥ V_CC ≥ 4.0V
0
Expected Data Retention
t_DR
10
TYP
150
DS1689/DS1693
MAX UNITS NOTES
0
ns
ms
µs
µs
µs
years 13, 14
POWER-UP/POWER-DOWN TIMING—3V
(T_A = +25°C)
PARAMETER
SYMBOL
MIN
CS High to Power-Fail
t_PF
Recovery at Power-Up
t_REC
V_CC Slew Rate Power-Down
t_F
2.5 ≤ V_CC ≤ 3.0V
300
V_CC Slew Rate Power-Up
t_R
3.0V ≥ V_CC ≥ 2.5V
0
Expected Data Retention
t_DR
10
TYP
150
MAX UNITS NOTES
0
ns
ms
µs
µs
years 13, 14
WARNING: Under no circumstances are negative undershoots, of any amplitude,
allowed when device is in battery-backup mode.
CAPACITANCE
(T_A = +25°C)
PARAMETER
Input Capacitance
Output Capacitance
SYMBOL
C_IN
C_OUT
MIN
TYP
MAX
12
12
UNITS NOTES
pF
pF
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