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DS1689 Datasheet, PDF (24/32 Pages) Dallas Semiconductor – 3-Volt/5-Volt Serialized Real-Time Clock with NV RAM Control
DC ELECTRICAL CHARACTERISTICS
PARAMETER
Average VCC Power Supply Current
CMOS Standby Current ( CS =VCC-0.2V)
Input Leakage Current (any input)
CEI Input Leakage
PSEL Input Leakage
Output Leakage Current
Output Logic 1 Voltage (IOUT = 0.4 mA)
Output Logic 0 Voltage (IOUT = 0.8 mA)
Output Voltage
Output Current
Power-Fail Trip Point
Output Voltage
Output Current
Battery Leakage OSC ON
Battery Leakage OSC OFF
I/O Leakage
PWR Output @ 0.4V
CEI to CEO Impedance
SYMBOL
ICC1
ICC2
IIL
I CEI
IPSEL
IOL
VOH
VOL
VCCO1
ICCO1
VPF
VCCO2
ICCO2
IBAT1
IBAT2
ILO
IOLPWR
ZCE
DS1689/DS1693
Over the operating range (3V)
MIN
TYP MAX UNITS NOTES
5
10 mA
2, 3
0.5
2
mA
2, 3
-1
+1
mA
-160
+1
mA
15
+1
-160 mA
16
+160
-1
mA
8
2.4
V
0.4
V
VCC
V
4
-0.3
50 mA
4
2.5 2.6 2.7
V
5
VBAT
-0.3
V
6
100 mA
6
500 1000 nA
50 150 nA
17
-1
+1
mA
7
4
mA
1
120
W
12
RTC AC TIMING CHARACTERISTICS
PARAMETER
Cycle Time
Pulse Width, RD / WR Low
Pulse Width, RD / WR High
Input Rise and Fall Time
Chip Select Setup Time Before WR , or RD
Chip Select Hold Time
Read Data Hold Time
Write Data Hold Time
Muxed Address Valid Time to ALE Fall
Muxed Address Hold Time from ALE Fall
RD or WR High Setup to ALE Rise
Pulse Width ALE High
ALE Low Setup to RD or WR Fall
Output Data Delay Time from RD
Data Setup Time
IRQ Release from RD
CEI to CEO Delay
SYMBOL
tCYC
PWRWL
PWRWH
tR, tF
tCS
tCH
tDHR
tDHW
tASL
tAHL
tASD
PWASH
tASED
tDDR
tDSW
tIRD
tCED
Over the operating range (3V)
MIN TYP MAX UNITS NOTES
915
DC ns
375
ns
450
ns
30
ns
75
ns
0
ns
10
120 ns
0
ns
90
ns
30
ns
30
ns
180
ns
120
ns
20
370 ns
9
180
ns
2
ms
20
ns
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