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DS1672 Datasheet, PDF (11/13 Pages) Dallas Semiconductor – Low Voltage Serial Timekeeping Chip
POWER-UP DOWN CHARACTERISTICS
PARAMETER
SYMBOL MIN
VCC Detect to RST (VCC Falling)
VCC Detect to RST (VCC Rising)
VCC Fall Time; VPF(MAX) to VPF(MIN)
tRPD
tRPU
tF
300
VCC Rise Time; VPF(MIN) to VPF(MAX)
tR
0
TYP
250
DS1672
(-40°C to +85°C)
MAX UNITS NOTES
10
µs
ms
6
µs
µs
WARNING:
Under no circumstances are negative undershoots, of any amplitude, allowed when device is in write
protection.
NOTES:
1. All voltages are referenced to ground.
2. After this period, the first clock pulse is generated.
3. A device must internally provide a hold time of at least 300 ns for the SDA signal (referenced to the
VIHMIN of the SCL signal) in order to bridge the undefined region of the falling edge of SCL.
4. The maximum tHD:DAT has only to be met if the device does not stretch the LOW period (tLOW) of the
SCL signal.
5. CB - total capacitance of one bus line in pF.
6. If the EOSC bit in the Control Register is set to logic 1, tRPU is equal to 250 ms plus the start-up time
of the crystal oscillator.
7. ICCA specified with SCL clocking at max frequency (400 kHz).
8. ICCS specified with VCC = 3.3V and SDA, SCL=3.3V.
9. ICCS specified with VCC = 3.0V and SDA, SCL=3.0V.
10. ICCS specified with VCC = 2.0V and SDA, SCL=2.0V.
11. A fast mode device can be used in a standard mode system, but the requirement tSU:DAT >= to 250 ns
must then be met. This will automatically be the case if the device does not stretch the LOW period
of the SCL signal. If such a device does stretch the LOW period of the SCL signal, it must output the
next data bit to the SDA line tR max + tSU:DAT = 1000+250 = 1250 ns before the SCL line is released.
12. IOSC specified with VCC = 0V, VBACKUP =3.6V and oscillator enabled.
13. IBACKUP specified with VCC = 0V, VBACKUP =3.6V and oscillator disabled.
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