MTB110P10E3 Datasheet, PDF (6/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C968E3
Issued Date : 2014.08.04
Revised Date :
Page No. : 6/8
Typical Characteristics(Cont.)
Typical Transfer Characteristics
50
45 VDS=-10V
40
35
30
25
20
15
10
5
0
0
2
4
6
8
-VGS, Gate-Source Voltage(V)
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
0
10
0.0001
Transient Thermal Response Curves
1
Single Pulse Maximum Power Dissipation
TJ(MAX)=175°C
TC=25°C
θ JC=1.1°C/W
0.001 0.01
0.1
1
10
Pulse Width(s)
D=0.5
0.2
0.1 ^0.1
0.05
0.02
0.01
0.01
1.E-05
1.Rθ JC(t)=r(t)*RθJC
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*Rθ JC(t)
4.RθJC=1.1 °C/W
Single Pulse
1.E-04
1.E-03
1.E-02
1.E-01
t1, Square Wave Pulse Duration(s)
1.E+00
1.E+01
MTB110P10E3
CYStek Product Specification