MTB110P10E3 Datasheet, PDF (3/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C968E3
Issued Date : 2014.08.04
Revised Date :
Page No. : 3/8
Characteristics (TC=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
-100
-
-
V
VGS=0V, ID=-250μA
∆BVDSS/∆Tj
-
-0.09
-
V/°C Reference to 25°C, ID=-250μA
VGS(th)
-1.0
-
-2.5
V
VDS = VGS, ID=-250μA
GFS
-
19
-
S
VDS =-10V, ID=-11A
IGSS
-
-
±100
nA V_GS=±20V
IDSS
-
-
-
-
-1
-25
μA
VDS =-100V, VGS =0V
VDS =-80V, VGS =0V, Tj=125C
*RDS(ON)
-
-
80
93
110
125
mΩ
VGS =-10V, ID=-11A
VGS =-4.5V, ID=-8A
Dynamic
*Qg
-
30.6
-
*Qgs
-
3.8
-
nC ID=-11A, VDS=-80V, VGS=-10V
*Qgd
-
9.3
-
*td(ON)
-
9.0
-
*tr
*td(OFF)
-
18.2
-
-
69.8
-
ns
VDS=-50V, ID=-11A, VGS=-10V,
RG=5.1Ω
*tf
-
73.2
-
Ciss
-
1726
-
Coss
-
104
-
pF
VGS=0V, VDS=-25V, f=1MHz
Crss
-
71
-
Rg
-
11
-
Ω f=1MHz
Source-Drain Diode
*IS
*ISM
*VSD
*trr
*Qrr
-
-
-
-
-23
-76
A
-
-0.84
-1.3
V
IS=-11A, VGS=0V
-
25.3
-
-
33.4
-
ns
nC
IF=-11A, VGS=0V, dI/dt=100A/μs
*Pulse Test : Pulse Width 300μs, Duty Cycle2%
MTB110P10E3
CYStek Product Specification