MTB110P10E3 Datasheet, PDF (5/8 Pages) Cystech Electonics Corp. – P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C968E3
Issued Date : 2014.08.04
Revised Date :
Page No. : 5/8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
Coss
100
Crss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=-1mA
1
0.8
0.6
ID=-250μ A
10
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
100
Gate Charge Characteristics
10
10
1
0.1
0.01
0.001
VDS=-10V
Pulsed
Ta=25°C
0.01
0.1
1
10
100
-ID, Drain Current(A)
Maximum Safe Operating Area
1000
8
VDS=-20V
6
VDS=-80V
4
VDS=-50V
2
ID=-11A
0
0 5 10 15 20 25 30 35 40
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
25
100
RDS(ON)
Limit
10
10μs
100μ s
1ms
1 ^{TC=25°C, Tj=175°C,}
VGS=10V,RθJC=1.1°C/W
single pulse
10ms
100ms
DC
0.1
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
1000
20
15
10
5
VGS=10V, RθJC=1.1°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTB110P10E3
CYStek Product Specification