MTD300A20Q8 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – Dual N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C875Q8
Issued Date : 2016.11.23
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
NormalizedThreshold Voltage vs Junction Tempearture
1.4
Ciss
100
C _oss
10
0
Crss
10 20 30 40 50 60 70 80 90 100
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
1
1.2
ID=1mA
1
0.8
ID=250μA
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=40V
8
VDS=100V
6
0.1
0.01
0.001
100
VDS=10V
Pulsed
Ta=25°C
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
4
VDS=160V
2
ID=3A
0
0 2 4 6 8 10 12 14 16
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Junction Temperature
2
10
RDS(ON)
Limited
1
0.1
0.01 ^{TA=25°C, Tj=150°, VGS=10V}
RθJA=78°C/W, Single Pulse
100μs
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
1.5
1
0.5
VGS=10V, RθJA=78°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTD300A20Q8
Preliminary
CYStek Product Specification