MTD300A20Q8 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – Dual N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TC=25°C
Continuous Drain Current @ VGS=10V, TC=100°C
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=5A, VDD=50V
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
Spec. No. : C875Q8
Issued Date : 2016.11.23
Revised Date :
Page No. : 2/9
Limits
Unit
200
±20
V
2.6
1.6
1.5 (Note 2)
A
1.2 (Note 2)
10 (Note 1)
6
12.5 (Note 4) mJ
2
1.6 (Note 2)
W
0.9 (Note 3)
-55~+150
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, dual
Thermal Resistance, Junction-to-ambient, max , single operation
Note : 1. Pulse width limited by maximum junction temperature
2. Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s.
3. Surface mounted on minimum copper pad, pulse width≤10s.
4. 100% tested by conditions of L=1mH, VGS=10V, IAS=3A, VDD=50V.
Symbol
RθJC
RθJA
Value
25
62.5
78 (Note 2)
135 (Note 3)
Unit
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
200
-
-
V
VGS=0V, ID=250μA
1.2
-
2.4
VDS =VGS, ID=250μA
-
8
-
S VDS =10V, ID=3A
-
-
±100
nA VGS=±20V, VDS=0V
-
-
-
-
1
25
μA
VDS =160V, VGS =0V
VDS =160V, VGS =0V, Tj=70°C
-
285
370
mΩ ^{VGS =10V, ID=3A}
-
285
395
VGS =4.5V, ID=2A
-
15.3 23.9
-
1.9
-
nC VDS=160V, ID=3A, VGS=10V
-
4.4
-
MTD300A20Q8
Preliminary
CYStek Product Specification