MTD300A20Q8 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – Dual N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C875Q8
Issued Date : 2016.11.23
Revised Date :
Page No. : 4/9
Typical Characteristics
10
10V
9V
8 _8V
7V
6
6V
5V
4V
4 ^3.5V
Typical Output Characteristics
VGS=3V
2
0
0
2
4
6
8
10
VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1000
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=4.5V
1
Tj=25°C
0.8
0.6
Tj=150°C
VGS=10V
0.4
100
0.01
0.1
1
10
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1000
900
800
ID=3A
700
600
500
400
300
200
100
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.5
VGS=10V, ID=3A
2
1.5
1
0.5
RDS(ON)@Tj=25°C : 285mΩ typ
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTD300A20Q8
Preliminary
CYStek Product Specification