MTD2K5P20KM3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – -200V P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C097M3
Issued Date : 2016.06.17
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100
Threshold Voltage vs Junction Tempearture
1.6
1.4
1.2
ID=-1mA
1
10
0.8
C _oss
Crss
0.6
ID=-250μA
1
0
5
10
15
20
25
30
-VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
10
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
VDS=-100V
1
VDS=-40V
6
0.1
VDS=-15V
Pulsed
Ta=25°C
0.01
0.001
0.01
0.1
1
10
-ID, Drain Current(A)
Maximum Safe Operating Area
10
RDS(ON)
1 ^Limited
100μs
1ms
0.1
0.01
TA=25°C, Tj=150°C
VGS=-10V, RθJA=62.5°C/W
Single Pulse
10ms
100ms
DC
0.001
0.1
1
10
100
-VDS, Drain-Source Voltage(V)
1000
4
VDS=-160V
2
ID=-0.55A
0
0
2
4
6
8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Drain Current vs JunctionTemperature
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1 _{TA=25°C, VGS=-10V, RθJA=62.5°C/W}
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTD2K5P20KM3
CYStek Product Specification