MTD2K5P20KM3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – -200V P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C097M3
Issued Date : 2016.06.17
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current @ TA=25°C
Continuous Drain Current @ TA=70°C
ID
Pulsed Drain Current
IDM
Total Power Dissipation (TA=25℃)
PD
Linear Derating Factor
Operating Junction and Storage Temperature
Tj, Tstg
Note : *1. Pulse width limited by maximum junction temperature
*2. Surface mounted on 1 in² copper pad of FR-4 board
*3. Pulse width≤300μs, duty cycle≤2%
Limits
-200
±20
-0.67
-0.54
-2.8 *1, 3
2 *2
0.02
-55~+150
Unit
V
A
W
W/°C
°C
Thermal Data
Parameter
Symbol
Value
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
62.5*
* Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad
Unit
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Ciss
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
MTD2K5P20KM3
Min. Typ. Max. Unit
Test Conditions
-200
-
-
V VGS=0V, ID=-250μA
-
-0.1
-
V/°C Reference to 25°C, ID=-250μA
-1.2
-
-2.4
V VDS=VGS, ID=-250μA
-
10
-
S VDS=-5V, ID=-3A
-
-
±10
VGS=±20V, VDS=0V
-
-
-1
μA _{VDS=-200V, VGS=0V}
-
-
-25
VDS=-200V, VGS=0V (Tj=70°C)
-
-
1.9
2.5
2.0
4.0
Ω
ID=-0.6A, VGS=-10V
ID=-0.6A, VGS=-4V
-
379
-
-
28
-
-
21
-
-
41.2
-
-
75.6
-
-
31.8
-
-
404.4
-
pF VDS=-25V, VGS=0V, f=1MHz
ns
VDS=-100V, ID=-0.6A, VGS=-10V,
RG=6Ω
CYStek Product Specification