MTD2K5P20KM3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – -200V P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C097M3
Issued Date : 2016.06.17
Revised Date :
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
3.0
10V,9V,8V,7V,6V,5V,4V
2.5
2.0
1.5
-VGS=3.5V
1.0
0.5
-VGS=3V
0.0
0
5 10 15 20 25 30 35 40 45 50
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
5
4.5
4
VGS=-4V
-4.5V
3.5
-10V
3
2.5
2
1.5
1
0.5
0
0.001
0.01
0.1
1
10
-ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
20
18
ID=-0.6A
16
14
12
10
8
6
4
2
0
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=-250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0
0.5
1
1.5
2
2.5
3
-IDR, Reverse Drain Current (A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
2
VGS=-10V, ID=-0.6A
RDSON@Tj=25°C : 1.9Ω typ.
1.6
1.2
0.8
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTD2K5P20KM3
CYStek Product Specification