MTB2D5N03BE3 Datasheet, PDF (5/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C998E3
Issued Date : 2016.08.01
Revised Date :
Page No. : 5/ 8
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
1000
C _oss
100
0
100
10
Crss
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
VDS=10V
0.8
0.6
ID=250μA
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
8
6
1
VDS=15V
4
0.1
Ta=25°C
Pulsed
0.01
0.001 0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Safe Operating Area
1000
RDSON
Limited
100
10
1 ^{TC=25°C, Tj=150°C}
VGS=10V, RθJC=1.5°C/W
Single Pulse
0.1
0.1
1
10
VDS, Drain-Source Voltage(V)
10μs
100μs
1ms
10ms
100ms
DC
100
VDS=15V
2
ID=30A
0
0
10
20
30
40
50
60
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
120
100
Silicon Limit
80
60
Package Limit
40
20
0
25
VGS=10V, RθJC=1.5°C/W
50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTB2D5N03BE3
CYStek Product Specification