MTB2D5N03BE3 Datasheet, PDF (3/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C998E3
Issued Date : 2016.08.01
Revised Date :
Page No. : 3/ 8
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
30
∆BVDSS/∆Tj
-
VGS(th)
1
*GFS
-
IGSS
-
-
IDSS
-
*RDS(ON)
-
-
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
Ciss
-
Coss
-
Crss
-
Rg
-
Source-Drain Diode
*IS
-
*ISM
-
*VSD
-
*trr
-
*Qrr
-
-
28
-
32.5
-
-
-
3.5
4.6
56
8.1
13.5
17.8
19.4
61
14.2
2657
478
290
1.8
-
-
0.82
19.8
11.3
-
-
2.5
-
±100
1
5
4.5
6.0
-
-
-
-
-
-
-
-
-
-
-
66
264
1.2
-
-
V
mV/°C
V
S
nA
μA
mΩ
VGS=0V, ID=250μA
Reference to 25°C, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=30A
VGS=±20V
VDS =30V, VGS =0V
VDS =24V, VGS =0V, Tj=55°C
VGS =10V, ID=30A
VGS =4.5V, ID=20A
nC
VDD=15V, ID=30A,VGS=10V
ns
VDD=15V, ID=30A, VGS=10V,
RG=3Ω
pF
VGS=0V, VDS=15V, f=1MHz
Ω f=1MHz
A
V
IS=20A, VGS=0V
ns
nC
VGS=0V, IF=20A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTB2D5N03BE3
CYStek Product Specification