MTB2D5N03BE3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C998E3
Issued Date : 2016.08.01
Revised Date :
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTB2D5N03BE3
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• RoHS compliant package
BVDSS
ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=25°C
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=10V, ID=30A
RDS(ON)@VGS=4.5V, ID=20A
30V
111A(Si limit)
66A(PKG limit)
17.5A
3.5 mΩ(typ)
4.6 mΩ(typ)
Symbol
MTB2D5N03BE3
Outline
TO-220
G：Gate D：Drain S：Source
GDS
Ordering Information
Device
MTB2D5N03BE3-0-UB-X
Package
TO-220
(RoHS compliant)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB2D5N03BE3
CYStek Product Specification