MTB20N04J3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C978J3
Issued Date : 2015.01.05
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
100
10
0.1
C _oss
Crss
1
10
100
VDS, Drain-Source Voltage(V)
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
0.6
ID=250μ A
0.4
0.2
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
1
Gate Charge Characteristics
10
VDS=20V
8
ID=10A
6
0.1
0.01
0.001
VDS=10V
Ta=25°C
Pulsed
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
100
RDSON
Limited
10
1
100μ s
1ms
10ms
100ms
1s
DC
0.1 ^{TC=25°C, Tj=175°C}
VGS=10V, θJC=5°C/W
Single Pulse
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
4
2
0
0
4
8
12
16
20
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
25
20
15
10
5
VGS=10V, RθJC=5°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
MTB20N04J3
CYStek Product Specification