MTB20N04J3 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C978J3
Issued Date : 2015.01.05
Revised Date :
Page No. : 3/9
Source-Drain Diode
IS *1
ISM *3
-
-
23
A
-
-
92
VSD *1
-
0.74
1
V
trr
-
10.1
-
ns
Qrr
-
6.5
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
IF=1.3A, VGS=0V
IF=5A, dIF/dt=100A/μs
Recommended soldering footprint
MTB20N04J3
CYStek Product Specification