MTB20N04J3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – N -Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Pulsed Drain Current *1
Avalanche Current
Avalanche Energy @ L=1mH, ID=18A, RG=25Ω
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
Note : *1. Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
Symbol
VDS
VGS
ID
ID
IDM
IAS
EAS
PD
Tj, Tstg
Spec. No. : C978J3
Issued Date : 2015.01.05
Revised Date :
Page No. : 2/9
Limits
Unit
40
±20
V
23
16.3
A
92
18
162
mJ
30
W
15
-55~+175
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
5
62.5
Unit
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
40
VGS(th)
1
IGSS
-
IDSS
-
-
RDS(ON) *1
-
-
GFS *1
-
Dynamic
Qg *1, 2
-
Qgs *1, 2
-
Qgd *1, 2
-
td(ON) *1, 2
-
tr *1, 2
-
td(OFF) *1, 2
-
tf *1, 2
-
Ciss
-
Coss
-
Crss
-
Rg
-
-
-
V
VGS=0V, ID=250μA
-
2.5
VDS =VGS, ID=250μA
-
±100
nA V_GS=±20V, V_DS=0V
-
-
1
10
μA
VDS =40V, VGS =0V
VDS =32V, VGS =0V, TJ=125°C
17.5
23
mΩ ^{VGS =10V, ID=10A}
20.8
30
VGS =4.5V, ID=8A
14
-
S VDS =5V, ID=10A
19.4
-
2.7
-
nC VDS=20V, ID=10A, VGS=10V
4
-
8
-
16.8
42.6
-
-
ns VDS=20V, ID=1A, VGS=10V, RG=6Ω
7.8
-
876
-
93
-
pF VGS=0V, VDS=10V, f=1MHz
78
-
3.6
-
Ω f=1MHz
MTB20N04J3
CYStek Product Specification