MTB160A15Q8 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – Dual N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C938Q8
Issued Date : 2017.02.10
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
1000
Ciss
100
C _oss
Threshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
Crss
10
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
10
1
0.1
0.01
0.001
100
VDS=10V
Pulsed
Ta=25°C
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=75V
8
VDS=30V
6
4
VDS=120V
2
ID=1.8A
0
0
2
4
6
8 10 12 14
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
2.5
10 _RDS(ON)
Limited
100μs
1
1ms
10ms
0.1
100ms
TA=25°C, Tj=175°C, VGS=10V
1s
RθJA=78°C/W,Single Pulse
DC
0.01
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
2
1.5
1
0.5
TA=25°C, Tj=175°C,VGS=10V
RθJA=78°C/W
0
25 50 75 100 125 150 175
TJ, Junction Temperature(°C)
MTB160A15Q8
CYStek Product Specification