MTB160A15Q8 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – Dual N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C938Q8
Issued Date : 2017.02.10
Revised Date :
Page No. : 2/9
The following characteristics apply to Tr 1 and Tr 2
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current ^{TC=25 °C, VGS=10V}
TC=100 °C, VGS=10V
Continuous Drain Current ^{TA=25 °C, VGS=10V}
(Note 2)
TA=70 °C, VGS=10V
Pulsed Drain Current (Note 1)
Power Dissipation for Dual Operation @TC=25°C
Power Dissipation for Dual Operation @TA=25°C
Power Dissipation for Single Operation @TA=25°C
Operating Junction and Storage Temperature Range
Symbol
BVDSS
VGS
ID
IDSM
IDM
PD
PDSM
Tj; Tstg
Limits
Unit
150
±20
V
3.2
2.3
1.8
A
1.5
10
6
3
W
1.9 (Note 2)
1.1 (Note 3)
-55~+175
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
RθJC
RθJA
Note : 1.Pulse width limited by maximum junction temperature.
2.Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s, single operation.
3.Surface mounted on minimum copper pad, pulse width≤10s, single operation.
Value
25
50
78 (Note 2)
135 (Note 3)
Unit
°C/W
Electrical Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max. Unit
Test Conditions
Static
BVDSS
150
∆BVDSS/∆Tj
-
VGS(th)
1.3
IGSS
-
IDSS
-
-
-
*RDS(ON)
-
-
-
V
VGS=0V, ID=250μA
0.14
-
V/°C Reference to 25°C, ID=250μA
-
2.3
V
VDS=VGS, ID=250μA
-
±100
nA VGS=±20V, VDS=0V
-
-
1
10
μA
VDS=120V, VGS=0V
VDS=120V, VGS=0, Tj=55°C
169
230
mΩ ^{ID=1.8A, VGS=10V}
176
250
ID=1.5A, VGS=4.5V
*GFS
-
7
-
S
VDS=10V, ID=1.8A
MTB160A15Q8
CYStek Product Specification