MTB160A15Q8 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – Dual N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C938Q8
Issued Date : 2017.02.10
Revised Date :
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
10
8
6
10V, 9V, 8V, 7V, 6V, 5V,4V,3V
4
VGS=2.5V
2
0
0
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
1000
VGS=3V
100
VGS=4.5V
10V
Reverse Drain Current vs Source-Drain Voltage
1.2
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
10
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
450
ID=1.8A
400
350
300
250
200
150
100
50
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
2
4
6
8
10
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.8
2.4
VGS=10V, ID=1.8A
2
1.6
1.2
0.8
RDS(ON)@Tj=25°C : 169mΩ typ.
0.4
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTB160A15Q8
CYStek Product Specification