MTB14A03V8 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – Dual N-Channel Logic Level Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
C _oss
100
Crss
Threshold Voltage vs Junction Tempearture
1.4
ID=250μA
1.2
1
0.8
0.6
10
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
VDS=5V
10
1
VGS=10V
0.1
0.01
0.001
Ta=25°C
Pulsed
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
100
RDSON
Limite
10
100μs
1
0.1
TA=25°C, Tj=150°C
VGS=10V, RθJA=84°C/W
Single Pulse
0.01
0.1
1
10
VDS, Drain-Source Voltage(V)
1ms
10ms
100ms
1s
DC
100
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8
VDS=10V
6
VDS=5V
4
2
ID=8.5A
0
0
4
8
12
16
20
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
10
9
8
7
6
5
4
3
2
1
TA=25°C, VGS=10V, RθJA=84°C/W
0
25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB14A03V8
CYStek Product Specification