MTB14A03V8 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – Dual N-Channel Logic Level Enhancement Mode MOSFET

CYStech Electronics Corp.
The following characteristics apply to each MOSFET.
Absolute Maximum Ratings (Ta=25°C, unless otherwise specified)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current @ VGS=10V, TA=25°C
Continuous Drain Current @ VGS=10V, TA=70°C
Pulsed Drain Current
Single device operation
Total Power Dissipation
Single device value at dual operation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj, Tstg
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 2/9
Limits
Unit
30
±20
V
8.5
6.8
A
40 *1
1.5 *2
W
1.24 *2
-55~+150
°C
Thermal Data
Parameter
Symbol Value Unit
Max. Thermal Resistance, Junction-to-ambient, single device operation
Max. Thermal Resistance, Junction-to-ambient, single device value at dual operation
Rth,j-a
84 *2
101 *2
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Surface mounted on a 1 in² pad of 2oz copper, t≤5s. In practice Rth,j-a will be determined by customer’s PCB characteristics.
216°C/W when mounted on a minimum pad of 2 oz. copper.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
VGS(th)
30
-
-
1
1.7
2.5
V
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
GFS *1
-
IGSS
-
9
-
S
VDS =5V, ID=6A
-
±100
nA V_GS=±20V
IDSS
-
-
-
-
1
25
μA
VDS =24V, VGS =0
VDS =24V, VGS =0, Tj=125°C
RDS(ON) *1
-
-
11.2
15
mΩ ^{VGS =10V, ID=6A}
16
23
VGS =4.5V, ID=4A
Dynamic
Ciss
-
1105
-
Coss
-
117
-
pF
VDS=15V, VGS=0V, f=1MHz
Crss
-
100
-
Qg *1, 2
-
16
-
Qgs *1, 2
-
3.3
-
nC
VDS=15V, VGS=10V, ID=8.5A
Qgd *1, 2
-
4
-
td(ON) *1, 2
-
12
-
tr *1, 2
-
td(OFF) *1, 2
-
9
-
33
-
ns VDS=15V, ID=1A, VGS=10V, RGS=6Ω
tf *1, 2
-
12
-
MTB14A03V8
CYStek Product Specification