MTB14A03V8 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – Dual N-Channel Logic Level Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C397V8
Issued Date : 2013.08.16
Revised Date : 2013.09.26
Page No. : 4/9
Typical Characteristics
Typical Output Characteristics
40
35
VGS=4V
30
25
10V,9V,8V,7V,6V,5V
20
15
10
5
0
0
VGS=3V
VGS=2V
1
2
3
4
5
VDS, Drain-Source Voltage(V)
1000
Static Drain-Source On-State resistance vs Drain Current
100
VGS=3V
Brekdown Voltage vs Junction Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
0.6
10
VGS=4.5V
VGS=10V
0.4
Tj=150°C
1
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
280
240
ID=6A
200
160
120
80
40
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
0.2
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2
1.8
VGS=10V, ID=6A
1.6
1.4
1.2
1
0.8
0.6
RDSON @ Tj=25°C : 11.2 mΩ typ
0.4
-60
-20 20
60 100 140 180
Tj, Junction Temperature(°C)
MTB14A03V8
CYStek Product Specification