MTB04N03AQ8 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C889Q8
Issued Date : 2013.12.02
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10000
Threshold Voltage vs Junction Tempearture
1.4
Ciss
1000
C _oss
Crss
100
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=5V
0.1
Pulsed
Ta=25°C
0.01
0.001 0.01
0.1
1
10
100
ID, Drain Current(A)
Maximum Safe Operating Area
1000
RDS(ON
100 ⁾
Limit
10
1
0.1
TA=25°C, Tj=150°C
VGS=10V, RθJA=50°C/W
Single Pulse
0.01
0.1
1
10
VDS, Drain-Source Voltage(V)
10μs
100μs
1ms
10ms
100m
DC
100
1.2
1
ID=1mA
0.8
ID=250μA
0.6
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
VDS=15V
8
ID=18A
6
4
2
0
0
10
20
30
40
50
60
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
25
20
15
10
5
VGS=10V, RθJC=25°C/W
0
25 50 75 100 125 150 175
TC, Case Temperature(°C)
MTB04N03AQ8
CYStek Product Specification