MTB04N03AQ8 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C889Q8
Issued Date : 2013.12.02
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=2mH, ID=20A, VDD=25V
TC=25℃
Total Power Dissipation
TC=100℃
TA=25℃
TA=70℃
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDSM
IDM
IAS
EAS
PD
PDSM
Tj, Tstg
Limits
Unit
30
V
±20
20
12.6
14
A
11
100 *1
20
400 *2
mJ
5
2
W
2.5 *3
1.6 *3
-55~+150
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
25
°C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
50 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle≤1%
3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
30
VGS(th)
1.0
GFS *1
-
IGSS
-
IDSS
-
-
-
RDS(ON) *1
-
Dynamic
Ciss
-
Coss
-
Crss
-
-
2.0
37
-
-
-
4.4
5.8
2394
494
281
-
2.5
-
±100
1
25
6
8
-
-
-
V
VGS=0, ID=250μA
V
VDS = VGS, ID=250μA
S
VDS =5V, ID=18A
nA
VGS=±20
μA
VDS =30V, VGS =0
VDS =30V, VGS =0, Tj=125°C
mΩ VGS =10V, ID=18A
mΩ VGS =4.5V, ID=12A
pF
VGS=0V, VDS=15V, f=1MHz
MTB04N03AQ8
CYStek Product Specification