MTB04N03AQ8 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – N-Channel Logic Level Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C889Q8
Issued Date : 2013.12.02
Revised Date :
Page No. : 3/9
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Qg (VGS=10V) *1, 2
-
46
-
Qg (VGS=4.5V) *1, 2
-
Qgs *1, 2
-
26
8
-
-
nC _{VDS=15V, VGS=10V, ID=18A}
Qgd *1, 2
-
13
-
td(ON) *1, 2
-
11
-
tr *1, 2
td(OFF) *1, 2
-
-
12
43
-
-
ns VDS=15V, ID=1A, VGS=10V, RGS=2.7Ω
tf *1, 2
-
17
-
Rg
-
1.5
-
Ω VGS=15mV, VDS=0V, f=1MHz
Source-Drain Diode
IS *1
ISM *3
-
-
10
-
-
40
A
VSD *1
-
0.81
1.2
V
trr
-
36
-
ns
Qrr
-
16
-
nC
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
IS=18A, VGS=0V
IF=IS, dIF/dt=100A/μs
MTB04N03AQ8
CYStek Product Specification