MTA50N15J3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C957J3
Issued Date : 2016.07.26
Revised Date :
Page No. : 5/ 9
Typical Characteristics(Cont.)
Forward Transfer Admittance vs Drain Current
100
10
1
VDS=10V
0.1
Pulsed
Ta=25°C
0.01
0.001 0.01
0.1
1
10
100
ID, Drain Current(A)
NormalizedThreshold Voltage vs Junction Tempearture
1.4
1.2
ID=1mA
1
0.8
0.6
0.4
ID=250μA
0.2
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
1000
Gate Charge Characteristics
10
100
RDS(ON)
Limited
10
1
TC=25°C, Tj=150°, VGS=10V
RθJC=1.5°C/W, Single Pulse
100μs
1ms
10ms
100ms
1s
DC
0.1
0.1
1
10
100
VDS, Drain-Source Voltage(V)
1000
Maximum Drain Current vs Case Temperature
30
25
20
15
10
5
VGS=10V, RθJC=1.5°C/W
0
25 50 75 100 125 150 175 200
TC, Case Temperature(°C)
8
VDS=75V
6
VDS=30V
4
VDS=120V
2
ID=15A
0
0 10 20 30 40 50 60 70 80
Total Gate Charge---Qg(nC)
Single Pulse Maximum Power Dissipation
3000
2500
TJ(MAX)=175°C
TC=25°C
2000
RθJC=1.5°C/W
1500
1000
500
0
0.001 0.01
0.1
1
10
Pulse Width(s)
100 1000
MTA50N15J3
CYStek Product Specification