MTA50N15J3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C957J3
Issued Date : 2016.07.26
Revised Date :
Page No. : 4/ 9
Typical Characteristics
Static Drain-Source On-State resistance vs Drain Current
100
Brekdown Voltage vs Ambient Temperature
1.4
1.2
In descending order
VGS=3V
4.5V
10V
10
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
90
80
ID=15A
70
60
50
40
30
20
10
0
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
10000
Capacitance vs Drain-to-Source Voltage
Ciss
1000
100
10
0
C _oss
Crss
20
40
60
80
VDS, Drain-Source Voltage(V)
1
0.8
ID=250μA,
VGS=0V
0.6
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
Reverse Drain Current vs Source-Drain Voltage
1.2
1
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.8
2.4
2
1.6
1.2
0.8
VGS=10V, ID=15A
0.4
RDSON@Tj=25°C : 44.3mΩ typ.
0
-75 -50 -25 0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
MTA50N15J3
CYStek Product Specification