MTA50N15J3 Datasheet, PDF (3/9 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C957J3
Issued Date : 2016.07.26
Revised Date :
Page No. : 3/ 9
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
150
-
-
V
VGS=0V, ID=250μA
∆BVDSS/∆Tj
-
0.1
-
V/°C Reference to 25°C, ID=250μA
VGS(th)
0.5
-
1.2
V
VDS = VGS, ID=250μA
*GFS
-
43.5
-
S
VDS =10V, ID=10A
IGSS
-
-
±100
nA V_GS=±20V
IDSS
-
-
-
-
1
25
μA
VDS =120V, VGS =0V
VDS =120V, VGS =0V, Tj=125°C
*RDS(ON)
-
-
44.3
56
mΩ ^{VGS =10V, ID=15A}
43.0
56
VGS =4.5V, ID=10A
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
-
69.9
-
-
3.8
-
-
12.5
-
-
11.6
-
-
21
-
-
108.2
-
-
83.8
-
-
2161
-
-
96
-
-
19
-
-
1
-
nC ID=15A, VDS=120V, VGS=10V
ns
VDS=75V, ID=15A, VGS=10V, RG=6Ω
pF
VGS=0V, VDS=80V, f=1MHz
Ω f=1MHz
Source-Drain Diode
*IS
-
*ISM
-
*VSD
-
*trr
-
*Qrr
-
-
-
27
100
A
0.8
1.2
V
IS=15A, VGS=0V
41
85
-
-
ns
nC
VGS=0V, IF=15A, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTA50N15J3
CYStek Product Specification