MTA010N01SN3 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – 14V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C131N3
Issued Date : 2016.03.28
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
10000
Capacitance vs Drain-to-Source Voltage
Threshold Voltage vs Junction Tempearture
1.4
1000
100
Ciss
C _oss
Crss
10
0
2
4
6
8 10 12 14
VDS, Drain-Source Voltage(V)
1.2
1
ID=1mA
0.8
0.6
ID=250μA
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
10
Gate Charge Characteristics
8
1
0.1
0.01
0.001
VDS=10V
Ta=25°C
Pulsed
0.01
0.1
1
10
ID, Drain Current(A)
Maximum Safe Operating Area
100
RDSON
10 ^Limited
100μs
1ms
1
10ms
0.1 ^{TA=25°C, Tj=150°C}
VGS=4.5V, RθJA=90°C/W
Single Pulse
100ms
1s
DC
0.01
0.01
0.1
1
10
100
VDS, Drain-Source Voltage(V)
6
4
2
VDS=10V
ID=7A
0
0
4
8
12
16
20
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
9
8
7
6
5
4
3
2
1
TA=25°C, VGS=4.5V, RθJA=90°C/W
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
MTA010N01SN3
CYStek Product Specification