MTA010N01SN3 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – 14V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C131N3
Issued Date : 2016.03.28
Revised Date :
Page No. : 4/9
40
35
30
25
20
15
10
5
0
0
Typical Output Characteristics
8V,7V,6V,5.5V,5V,4.5V,4V,3.5V,3V
2.5V
VGS=2V
1
2
3
4
5
VDS, Drain-Source Voltage(V)
Brekdown Voltage vs Junction Temperature
1.4
1.2
1
0.8
0.6
ID=250μA,
VGS=0V
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
100
VGS=3V
Reverse Drain Current vs Source-Drain Voltage
1.2
VGS=0V
1
Tj=25°C
0.8
10
0.6
VGS=4.5V
0.4
Tj=150°C
1
0.01
0.1
1
10
100
ID, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
500
400
ID=7A
300
200
100
0
0
2
4
6
8
VGS, Gate-Source Voltage(V)
0.2
0
4
8
12
16
20
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
2.4
VGS=4.5V, ID=7A
2
RDS(ON)@Tj=25°C : 12mΩ typ.
1.6
1.2
0.8
VGS=3V, ID=5A
RDS(ON)@Tj=25°C: 13.5mΩ typ.
0.4
0
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTA010N01SN3
CYStek Product Specification