MTA010N01SN3 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – 14V N-Channel Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C131N3
Issued Date : 2016.03.28
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3)
Continuous Drain Current @ TA=70°C, VGS=4.5V (Note 3)
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation@ TA=25℃ (Note 3)
Linear Derating Factor
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
Tj ; Tstg
Limits
14
±8
7.4
5.9
42
1.38
0.01
-55~+150
Unit
V
A
W
W/°C
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient, max
Thermal Resistance, Junction-to-Case, max
(Note)
Symbol
RθJA
RθJC
Limit
90
60
Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Unit
°C/W
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
td(ON)
tr
td(OFF)
tf
Min. Typ. Max. Unit
Test Conditions
14
-
-
V
VGS=0V, ID=250μA
0.5
-
1.0
VDS=VGS, ID=250μA
-
-
±100
nA VGS=±8V, VDS=0V
-
-
1
μA ^{VDS=14V, VGS=0V}
-
-
25
VDS=10V, VGS=0V(Tj=70°C)
-
-
12
13.5
16
18
mΩ
VGS=4.5V, ID=7A
VGS=3V, ID=5A
-
7.2
-
S VDS=10V, ID=3A
-
761
-
-
201
-
-
164
-
-
8.8
-
-
19
-
-
37.8
-
-
13.4
-
pF VDS=10V, VGS=0V, f=1MHz
ns VDS=10V, ID=7A, VGS=5V, RG=3.3Ω
MTA010N01SN3
CYStek Product Specification