HBNP5213G6 Datasheet, PDF (5/9 Pages) Cystech Electonics Corp. – NPN AND PNP Dual Epitaxial Planar Transistors

CYStech Electronics Corp.
Q2, PNP Typical Characteristics
Spec. No. : C627G6
Issued Date : 2013.10.17
Revised Date :
Page No. : 5/9
Current Gain vs Collector Current
1000
VCE=3V
100
VCE=2V
VCE=1V
10000
1000
100
Saturation Voltage vs Collector Current
VCESAT
IC=100IB
IC=50IB
IC=20IB
IC=10IB
10
1
10
100
Collector Current---IC(mA)
1000
10
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
1000
On Voltage vs Collector Current
1000
VBESAT@IC=10IB
VBEON@VCE=3V
100
1
1000
10
100
1000
Collector Current---IC(mA)
Transition Frequency vs Collector Current
100
1
100
10
100
1000
Collector Current---IC(mA)
Capacitance Characteristics
100
10
10
1
10
100
Collector Current---IC(mA)
1
1000
1
10
100
Reverse-biased Collector Base Voltage---VCB(V)
HBNP5213G6
CYStek Product Specification