HBNP5213G6 Datasheet, PDF (2/9 Pages) Cystech Electonics Corp. – NPN AND PNP Dual Epitaxial Planar Transistors

CYStech Electronics Corp.
Spec. No. : C627G6
Issued Date : 2013.10.17
Revised Date :
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
(Note 1)
Peak Collector Current
(Note 2)
Peak Base Current
(Note 2)
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature
Thermal Resistance, Junction-to-Ambient (Note 1)
Symbol
VCBO
VCEO
VEBO
IC
ICP
IBP
Pd
Tj, Tstg
Rth,ja
Limits
NPN
PNP
100
-100
80
-80
7
-7
1
-1
2
-2
200
-200
1.14
0.01
-55~+150
110
Unit
V
V
V
A
A
mA
W
W / °C
°C
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180°C/W when mounted on minimum copper pad
2.Pulse width limited by maximum junction temperature
NPN Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
100
-
-
V
IC=50μA
BVCEO
80
-
-
V
IC=1mA
BVEBO
7
-
-
V
IE=50μA
ICBO
-
-
100
nA VCB=100V, IE=0
IEBO
-
-
100
nA VEB=7V, IC=0
*VCE(SAT)
-
0.15
0.3
V
IC=500mA, IB=20mA
*VCE(SAT)
-
-
0.5
V
IC=1A, IB=50mA
*VBE(SAT)
-
-
1.2
V
IC=1A, IB=50mA
*hFE 1
180
-
390
-
VCE=10V, IC=150mA
*hFE 2
60
-
-
-
VCE=10V, IC=500mA
fT
150
230
-
MHz VCE=10V, IC=50mA, f=100MHz
Cob
-
6
15
pF VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
HBNP5213G6
CYStek Product Specification