HBNP5213G6 Datasheet, PDF (4/9 Pages) Cystech Electonics Corp. – NPN AND PNP Dual Epitaxial Planar Transistors

CYStech Electronics Corp.
Q1, NPN Typical Characteristics
Spec. No. : C627G6
Issued Date : 2013.10.17
Revised Date :
Page No. : 4/9
Current Gain vs Collector Current
1000
HFE
VCE=5V
Saturation Voltage vs Collector Current
1000
VCESAT
100
100
VCE=2V
VCE=1V
10
1
10
100
1000
Collector Current ---IC(mA)
10000
Saturation Voltage vs Collector Current
VBESAT@IC=10IB
10
1
10000
IC=25IB
IC=20IB
IC=10IB
10
100
1000
Collector Current ---IC(mA)
On Voltage vs Collector Current
VBEON@VCE=2V
1000
1000
100
1
10
100
1000
Collector Current--- IC(mA)
10000
Transition Frequency vs Collector Current
1000
VCE=10V
f=1MHz
100
1
10
100
1000
Collector Current--- IC(mA)
Capacitance Characteristics
100
f=1MHz
10000
100
10
10
1
10
100
1000
Collector Current---IC(mA)
1
0.1
1
10
100
Collector Base Voltage-- VCB(V)
HBNP5213G6
CYStek Product Specification