HBN1803M65 Datasheet, PDF (4/7 Pages) Cystech Electonics Corp. – Octuple High Voltage NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Typical Characteristics(Cont.)
Spec. No. : C628M65
Issued Date : 2015.10.27
Revised Date :
Page No. : 4/7
100000
Saturation Voltage vs Collector Current
VCE(SAT) @ IC=50IB
Saturation Voltage vs Collector Current
1000
10000
1000
Ta=125°C
75°C
25°C
-40°C
100
1
10
100
IC, Collector Current(mA)
1000
VBE(SAT) @ IC=10IB
Ta= -40°C
25°C
75°C
125°C
100
1
10
100
1000
IC, Collector Current(mA)
Saturation Voltage vs Collector Current
1000
On Voltage vs Collector Current
1000
Ta=-40°C
25°C
75°C
125°C
VBE(SAT) @ IC=20IB
Ta=-40°C
25°C
75°C
125°C
100
1
10
100
1000
IC, Collector Current(mA)
VBE(ON)@VCE=10V
100
1
10
100
IC, Collector Current(mA)
Capacitance vs Reverse-Biased Voltage
1000
Cib
100
10
Cob
1
0.1
1
10
100
Reverse-Biased Voltage(V)
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Power Derating Curve
50
100
150
TA, Ambient Temperature(℃)
1000
200
HBN1803M65
CYStek Product Specification