HBN1803M65 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – Octuple High Voltage NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C628M65
Issued Date : 2015.10.27
Revised Date :
Page No. : 2/7
The following ratings and characteristics apply to each transistor in this
device.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
500
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
300
mA
Total Power Dissipation
Pd
1.5
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~+150
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICES
IEBO
*VCE(sat)
*VCE(sat)
*VCE(sat)
*VBE(sat)
*hFE
*hFE
fT
Cob
Min.
500
400
5
-
-
-
-
-
-
-
50
50
-
-
Typ.
-
-
-
-
-
-
0.12
0.12
0.13
0.72
-
-
100
3.9
Max.
-
-
-
100
100
100
0.18
0.18
0.3
1
300
-
-
-
Unit
V
V
V
nA
nA
nA
V
V
V
V
-
-
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=500V
VCE=300V, REB=0Ω
VEB=5V
IC=20mA, IB=1mA
IC=50mA, IB=5mA
IC=100mA, IB=20mA
IC=20mA, IB=2mA
VCE=10V, IC=10mA
VCE=10V, IC=100mA
VCE=10V, IC=10mA, f=5MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
HBN1803M65
CYStek Product Specification