HBN1803M65 Datasheet, PDF (3/7 Pages) Cystech Electonics Corp. – Octuple High Voltage NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C628M65
Issued Date : 2015.10.27
Revised Date :
Page No. : 3/7
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
Emitter Grounded Output Characteristics
IB=1mA
IB=500uA
IB=300uA
IB=200uA
IB=100uA
IB=0
1
2
3
4
5
6
VCE, Collector-to-Emitter Voltage(V)
0.16
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
Emitter Grounded Output Characteristics
IB=5mA
IB=2.5mA
IB=1.5mA
IB=1mA
IB=500uA
IB=0
1
2
3
4
5
6
VCE, Collector-to-Emitter Voltage(V)
Current Gain vs Collector Current
1000
VCE=5V
Ta=125°C
75°C
25°C
-40°C
100
Current Gain vs Collector Current
1000
VCE=10V
Ta=125°C
75°C
25°C
-40°C
100
10
10
1
10
100
1000
1
10
100
1000
IC, Collector Current(mA)
IC, Collector Current(mA)
Saturation Voltage vs Collector Current
1000
VCE(SAT) @ IC=10IB
10000
Saturation Voltage vs Collector Current
VCE(SAT) @ IC=20IB
100
10
1
1000
Ta=125°C
75°C
25°C
-40°C
10
100
IC, Collector Current(mA)
1000
100
10
1
Ta=125°C
75°C
25°C
-40°C
10
100
1000
IC, Collector Current(mA)
HBN1803M65
CYStek Product Specification